Datasheet > IRHM7460SEPBF

IRHM7460SEPBF

更新时间： 2024-09-23 20:07:43

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	163K
描述
Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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IRHM7460SEPBF 数据手册

PD-91394F

IRHM7460SE

JANSR2N7392

500V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

REF: MIL-PRF-19500/661

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7460SE

100K Rads (Si)

0.32Ω

18A

JANSR2N7392

TO-254AA

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a

decade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such

as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching, ease

of paralleling and temperature stability of electrical

parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

11.7

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

250

W/°C

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.8

-55 to 150

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 sec.)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

06/03/14

12 3 4 5 6 7 8

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与IRHM7460SEPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM7460SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEU	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEUPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7C50SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHM7C50SED	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Me
IRHM7C50SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M

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