是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 其他特性: | HIGH RELIABILITY, RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.57 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM7450U | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-254VAR | |
IRHM7460SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A) | |
IRHM7460SED | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7460SEDPBF | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7460SEPBF | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7460SESCS | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7460SESCSPBF | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7460SEU | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7460SEUPBF | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7C50SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |