是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
其他特性: | HIGH RELIABILITY, RADIATION HARDENED | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.21 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 88 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM7360SEDPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7360SEPBF | INFINEON |
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暂无描述 | |
IRHM7360SESCS | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM7360SESCSPBF | INFINEON |
获取价格 |
暂无描述 | |
IRHM7360SEU | INFINEON |
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暂无描述 | |
IRHM7360U | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22A I(D) | TO-254VAR | |
IRHM7360UPBF | INFINEON |
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暂无描述 | |
IRHM7450 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED | |
IRHM7450_06 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM7450D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-254VAR |