PD - 91393D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM7264SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Product Summary
Part Number
250Volt, 0.11Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds.Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
BVDSS
RDS(on)
ID
IRHM7264SE
250V
0.11Ω
31A
Features:
n
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Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Electrically Isolated
Ceramic Eyelets
Pre-Irradiation
Absolute Maximum Ratings
Parameter
IRHM7264SE
Units
I
D
@ V
= 12V, T = 25°C Continuous Drain Current
31
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
C
19
GS
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
124
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
±20
500
GS
E
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
AS
I
31
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
25
mJ
V/ns
AR
dv/dt
2.5
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
STG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
www.irf.com
1
10/9/98