Datasheet > IRHM7264SEUPBF

IRHM7264SEUPBF

更新时间： 2024-11-11 20:50:47

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	128K
描述
Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRHM7264SEUPBF 数据手册

PD - 91393D

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM7264SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

Part Number

250Volt, 0.11Ω, (SEE) RAD HARD HEXFET

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate immunity to SEE failure. Ad-

ditionally, under identical pre- and post-radiation test

conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal op-

eration within a few microseconds.Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

BVDSS

RDS(on)

IRHM7264SE

250V

0.11Ω

31A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Electrically Isolated

Ceramic Eyelets

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHM7264SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

124

@ T = 25°C

250

W/°C

2.0

±20

500

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

2.5

-55 to 150

Storage Temperature Range

Lead Temperature

^oC

STG

300 (0.063 in. (1.6mm) from

case for 10 sec.)

Weight

9.3 (typical)

www.irf.com

10/9/98

12 3 4 5 6 7 8

中文翻译

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与IRHM7264SEUPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM7360	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7360D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 22A I(D) \| TO-254VAR
IRHM7360DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
IRHM7360SED	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SEPBF	INFINEON	获取价格	暂无描述
IRHM7360SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SESCSPBF	INFINEON	获取价格	暂无描述
IRHM7360SEU	INFINEON	获取价格	暂无描述

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