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IRHM7450DPBF

更新时间： 2024-11-11 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 313K
描述
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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IRHM7450DPBF 数据手册

 浏览型号IRHM7450DPBF的Datasheet PDF文件第2页浏览型号IRHM7450DPBF的Datasheet PDF文件第3页浏览型号IRHM7450DPBF的Datasheet PDF文件第4页浏览型号IRHM7450DPBF的Datasheet PDF文件第5页浏览型号IRHM7450DPBF的Datasheet PDF文件第6页浏览型号IRHM7450DPBF的Datasheet PDF文件第7页 
PD - 90673A  
IRHM7450  
IRHM8450  
JANSR2N7270  
JANSH2N7270  
N CHANNEL  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
MEGA RAD HARD  
Product Summary  
500Volt, 0.45Ω, MEGA RAD HARD HEXFET  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage  
stability and breakdown voltage stability at total  
radiaition doses as high as 1x106 Rads(Si). Under  
identical pre- and post-irradiation test conditions, In-  
ternational Rectifier’s RAD HARD HEXFETs retain  
identical electrical specifications up to 1 x 105 Rads  
(Si) total dose. No compensation in gate drive circuitry  
is required. These devices are also capable of surviv-  
ing transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few  
microseconds. Since the RAD HARD process utilizes  
International Rectifier’s patented HEXFET technology,  
the user can expect the highest quality and reliability  
in the industry.  
Part Number  
IRHM7450  
IRHM8450  
BVDSS  
500V  
500V  
RDS(on)  
0.45Ω  
0.45Ω  
ID  
11A  
11A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy  
pulse circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings   
Parameter  
IRHM7450, IRHM8450  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
11  
D
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
7.0  
GS  
C
I
Pulsed Drain Current ‚  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
44  
DM  
@ T = 25°C  
P
D
150  
1.2  
W
W/°C  
V
C
V
±20  
500  
11  
GS  
E
Single Pulse Avalanche Energy ƒ  
Avalanche Current ‚  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy‚  
Peak Diode Recovery dv/dt „  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
9.3 (typical)  
www.irf.com  
1
02/01/99  
1234567...12

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 		TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
IRHM7450SED INFINEON

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 		Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Met
IRHM7450SEDPBF INFINEON

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 		Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Met
IRHM7450SESCS INFINEON

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 		Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kr
IRHM7450SEU INFINEON

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 		Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Met
IRHM7450U ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-254VAR
IRHM7460SE INFINEON

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 		TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
IRHM7460SED INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEDPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met

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