Datasheet > IRHM8054DPBF

IRHM8054DPBF

更新时间： 2024-09-23 19:24:59

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	267K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM8054DPBF 数据手册

T^®

Absolute Maximum Ratings

Parameter

PD - 90887D

IRHM7054

JANSR2N7394

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

REF: MIL-PRF-19500/663

Product Summary

Part Number Radiation Level RDS(on) ID

QPL Part Number

IRHM7054

IRHM3054

100K Rads (Si) 0.027Ω 35*A JANSR2N7394

300K Rads (Si) 0.027Ω 35*A JANSF2N7394

IRHM4054

IRHM8054

600K Rads (Si) 0.027Ω 35*A JANSG2N7394

1000K Rads (Si) 0.027Ω 35*A JANSH2N7394

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

200

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

*Current is limited by pin diameter

www.irf.com

8/9/01

12 3 4 5 6 7 8

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与IRHM8054DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM8054U	INFINEON	获取价格	暂无描述
IRHM8054UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM8064	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHM8064D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM8064DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM8064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM8130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8130D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-254VAR
IRHM8130DPBF	INFINEON	获取价格	暂无描述
IRHM8130U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-254VAR

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