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IRHM7460SESCS

更新时间： 2024-09-23 18:32:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 131K
描述
Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

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中文翻译

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IRHM7460SESCS 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.76
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：500 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (ID)：18 A
最大漏源导通电阻：0.36 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-XSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：72 A
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHM7460SESCS 数据手册

 浏览型号IRHM7460SESCS的Datasheet PDF文件第2页浏览型号IRHM7460SESCS的Datasheet PDF文件第3页浏览型号IRHM7460SESCS的Datasheet PDF文件第4页浏览型号IRHM7460SESCS的Datasheet PDF文件第5页浏览型号IRHM7460SESCS的Datasheet PDF文件第6页浏览型号IRHM7460SESCS的Datasheet PDF文件第7页 
PD - 91394D  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7460SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
500Volt, 0.32Ω, (SEE) RAD HARD HEXFET  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate immunity to SEE failure. Ad-  
ditionally, under identical pre- and post-radiation test  
conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal op-  
eration within a few microseconds.Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
BVDSS  
RDS(on)  
ID  
IRHM7460SE  
500V  
0.32Ω  
18A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHM7460SE  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
18  
11.7  
72  
D
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
2.0  
V
±20  
500  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
mJ  
A
AS  
I
18  
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
3.8  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
oC  
STG  
300 (0.063 in. (1.6mm) from  
case for 10 sec.)  
Weight  
9.3 (typical)  
g
www.irf.com  
1
10/9/98  
12345678

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与IRHM7460SESCS相关器件

型号 品牌 获取价格 描述 数据表
IRHM7460SESCSPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEU INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEUPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7C50SE INFINEON

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 		TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHM7C50SED INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SEDPBF INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SEPBF INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Me
IRHM7C50SESCS INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SESCSPBF INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SEU INFINEON

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