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IRHM7460SE

更新时间： 2024-09-22 22:36:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 109K
描述
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

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中文翻译

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IRHM7460SE 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.29
其他特性：AVALANCHE RATED; RADIATION HARDENED雪崩能效等级（Eas）：500 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：18.8 A
最大漏极电流 (ID)：18 A最大漏源导通电阻：0.36 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-254AA
JESD-30 代码：S-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：250 W
最大脉冲漏极电流 (IDM)：72 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHM7460SE 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1394A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7460SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
BVDSS  
RDS(on)  
ID  
IRHM7460SE  
500V  
0.32Ω  
18.8A  
Features:  
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
tion within a few microseconds. Since the SEE pro- n Gamma Dot (Flash X-Ray) Hardened  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality and  
reliability in the industry.  
n
n
n
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
RAD HARD HEXFET transistors also feature all of the n Dynamic dv/dt Rating  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits in space  
and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHM7460SE  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
18.8  
11.9  
75.2  
250  
D
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current  
Max.Power Dissipation  
Linear Derating Factor  
Gate-to-SourceVoltage  
DM  
@T = 25°C  
P
W
W/K ꢀ  
V
D
C
2.0  
V
±20  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current  
500  
mJ  
AS  
I
18.8  
25  
A
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
mJ  
3.5  
V/ns  
T
-55 to 150  
J
oC  
T
STG  
StorageTemperature Range  
(0.063 in. (1.6 mm) from case for 10s)  
9.3 (typical)  
LeadTemperature  
Weight  
300  
g
To Order  
 
 
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与IRHM7460SE相关器件

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IRHM7460SED INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEDPBF INFINEON

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IRHM7460SEPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SESCSPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEU INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7460SEUPBF INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met
IRHM7C50SE INFINEON

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 		TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHM7C50SED INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM7C50SEDPBF INFINEON

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 		Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M

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