IRHM8130DPBF

更新时间： 2024-09-23 12:58:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	487K
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IRHM8130DPBF 数据手册

RAD

Har

EXFET

TECHNOLOGY

Absolute Maximum Ratings

Parameter

PD - 90707D

IRHM7130

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

Product Summary

Part Number Radiation Level RDS(on)

IRHM7130

IRHM3130

IRHM4130

IRHM8130

100K Rads (Si) 0.18Ω

300K Rads (Si) 0.18Ω

600K Rads (Si) 0.18Ω

1000K Rads (Si) 0.18Ω

14A

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

9.0

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.60

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

160

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3(Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

7/5/01

12 3 4 5 6 7...12

中文翻译

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与IRHM8130DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM8130U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-254VAR
IRHM8130UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHM8150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8150D	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8150DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8150U	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8150UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8160	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM8160D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHM8160DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me

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