Datasheet > 晶体管 > 功率场效应晶体管> IRHM8130UPBF

IRHM8130UPBF

更新时间： 2024-11-11 13:02:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
12页	487K
描述
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHM8130UPBF 数据手册

RAD

Har

EXFET

TECHNOLOGY

Absolute Maximum Ratings

Parameter

PD - 90707D

IRHM7130

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

Product Summary

Part Number Radiation Level RDS(on)

IRHM7130

IRHM3130

IRHM4130

IRHM8130

100K Rads (Si) 0.18Ω

300K Rads (Si) 0.18Ω

600K Rads (Si) 0.18Ω

1000K Rads (Si) 0.18Ω

14A

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

9.0

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.60

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

160

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3(Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

7/5/01

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRHM8130UPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM8150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8150D	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8150DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8150U	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8150UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM8160	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM8160D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHM8160DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHM8160U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 35A I(D) \| TO-254VAR
IRHM8160UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me

与IRHM8130UPBF相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM8130UPBF

IRHM8130UPBF 数据手册

与IRHM8130UPBF相关器件

与IRHM8130UPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM8130UPBF

IRHM8130UPBF 数据手册

与IRHM8130UPBF相关器件

与IRHM8130UPBF相关文章

您还可以找

您在本页遇到什么问题？