是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.22 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 88 A | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM8360U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM8360UPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM8450 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED | |
IRHM8450D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHM8450DPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHM8450U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHM8450UPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHM8Z60 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM8Z60PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM9064 | INFINEON |
获取价格 |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A) |