是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.16 |
Is Samacsys: | N | 其他特性: | RADIATION HARDENED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 26 A | 最大漏极电流 (ID): | 26 A |
最大漏源导通电阻: | 0.11 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-XSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 104 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRHM7250PBF | INFINEON |
功能相似 |
暂无描述 | |
JANSR2N7269 | INFINEON |
功能相似 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM7250 | INFINEON |
功能相似 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM8250D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR | |
IRHM8250PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM8250U | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR | |
IRHM8260 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) | |
IRHM8260D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM8260DPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM8260U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM8360 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED | |
IRHM8360D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM8360DPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Met |