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IRHM8230PBF PDF预览

IRHM8230PBF

更新时间： 2024-09-23 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 301K
描述
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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中文翻译

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IRHM8230PBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：FLANGE MOUNT, S-MSFM-P3Reach Compliance Code：compliant
风险等级：5.67Is Samacsys：N
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：330 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (ID)：9 A
最大漏源导通电阻：0.49 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-MSFM-P3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：36 A
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHM8230PBF 数据手册

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PD - 90713C  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7230  
IRHM8230  
N CHANNEL  
MEGA HARD RAD  
Product Summary  
200Volt, 0.40Ω, MEGA RAD HARD HEXFET  
Part Number  
IRHM7230  
IRHM8230  
BVDSS  
200V  
200V  
RDS(on)  
0.40Ω  
0.40Ω  
ID  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage  
stability and breakdown voltage stability at total  
radiaition doses as high as 1x106 Rads(Si). Under  
identical pre- and post-irradiation test conditions, In-  
ternational Rectifier’s RAD HARD HEXFETs retain  
identical electrical specifications up to 1 x 105 Rads  
(Si) total dose. No compensation in gate drive circuitry  
is required. These devices are also capable of surviv-  
ing transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few  
microseconds. Since the RAD HARD process utilizes  
International Rectifier’s patented HEXFET technology,  
the user can expect the highest quality and reliability  
in the industry.  
9.0A  
9.0A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy  
pulse circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings   
Parameter  
IRHM7230, IRHM8230  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
9.0  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
6.0  
D
GS  
C
I
Pulsed Drain Current ‚  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
36  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.60  
±20  
V
GS  
E
Single Pulse Avalanche Energy ƒ  
Avalanche Current ‚  
330  
mJ  
A
AS  
I
9.0  
AR  
E
Repetitive Avalanche Energy‚  
Peak Diode Recovery dv/dt „  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
9.3 (typical)  
www.irf.com  
1
10/14/98  
1234567...12

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 		Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHM8260U INFINEON

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