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IRHM8260D

更新时间： 2024-09-23 19:31:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 265K
描述
Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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中文翻译

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IRHM8260D 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：35 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e0工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：250 W子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

IRHM8260D 数据手册

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PD - 91332D  
IRHM7260  
JANSR2N7433  
200V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (T0-254AA)  
®
HEXFET TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on) ID QPL Part Number  
IRHM7260  
IRHM3260  
IRHM4260  
IRHM8260  
100K Rads (Si) 0.070Ω 35*A JANSR2N7433  
300K Rads (Si) 0.070Ω 35*A JANSF2N7433  
600K Rads (Si) 0.070Ω 35*A JANSG2N7433  
1000K Rads (Si) 0.070Ω 35*A JANSH2N7433  
TO-254AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
35*  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
25  
161  
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
P
@ T = 25°C  
C
250  
W
W/°C  
V
D
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
5.7  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical )  
Lead Temperature  
Weight  
g
*Current limited by pin diameter  
For footnotes refer to the last page  
www.irf.com  
1
8/14/01  
12345678

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