型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM8230UPBF | INFINEON |
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Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHM8250 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM8250D | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR | |
IRHM8250PBF | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM8250U | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR | |
IRHM8260 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) | |
IRHM8260D | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM8260DPBF | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM8260U | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM8360 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED |