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Provisional Data Sheet No. PD-9.1252B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM2C50SE
IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600Volt, 0.60Ω, (SEE) RAD HARD HEXFET
Product Summary
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure.Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
Part Number
IRHM2C50SE
IRHM7C50SE
BVDSS
RDS(on)
ID
600V
0.60Ω
10.4A
Features:
n
n
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n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Ceramic Eyelets
Pre-Radiation
Absolute Maximum Ratings
Parameter
IRHM2C50SE, IRHM7C50SE Units
I
@ V
= 12V, T = 25°C Continuous Drain Current
10.4
D
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
6.5
41.6
150
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
W
W/K ꢀ
V
D
C
1.2
V
GS
±20
E
Single Pulse Avalanche Energy
Avalanche Current
500
mJ
AS
I
10.4
15
A
AR
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
mJ
3.0
V/ns
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
g
STG
300 (0.063 in (1.6 mm) from case for 10 sec)
9.3 (typical)
Weight
To Order