IRHM7360

更新时间： 2024-09-22 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
12页	325K
描述
REPETITIVE AVALANCHE AND dv/dt RATED

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHM7360 数据手册

PD - 90823A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM7360

IRHM8360

N CHANNEL

MEGA RAD HARD

Product Summary

400Volt, 0.22Ω, MEGA RAD HARD HEXFET

Part Number

IRHM7360

IRHM8360

BVDSS

400V

RDS(on)

0.22Ω

International Rectifier’s RAD HARD technology

HEXFETs demonstrate excellent threshold voltage

stability and breakdown voltage stability at total

radiaition doses as high as 1x10⁶Rads(Si). Under

identical pre- and post-irradiation test conditions, In-

ternational Rectifier’s RAD HARD HEXFETs retain

identical electrical specifications up to 1 x 10⁵Rads

(Si) total dose. No compensation in gate drive circuitry

is required. These devices are also capable of surviv-

ing transient ionization pulses as high as 1 x 10¹²Rads

(Si)/Sec, and return to normal operation within a few

microseconds. Since the RAD HARD process utilizes

International Rectifier’s patented HEXFET technology,

the user can expect the highest quality and reliability

in the industry.

22A

Features:

Radiation Hardened up to 1 x 10⁶Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy

pulse circuits in space and weapons environments.

Electrically Isolated

Ceramic Eyelets

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHM7230, IRHM8230

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

250

2.0

W/°C

±20

500

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

4.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (typical)

www.irf.com

10/28/98

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRHM7360相关器件

型号	品牌	获取价格	描述	数据表
IRHM7360D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 22A I(D) \| TO-254VAR
IRHM7360DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
IRHM7360SED	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SEPBF	INFINEON	获取价格	暂无描述
IRHM7360SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHM7360SESCSPBF	INFINEON	获取价格	暂无描述
IRHM7360SEU	INFINEON	获取价格	暂无描述
IRHM7360U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 22A I(D) \| TO-254VAR

与IRHM7360相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

2
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

3
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

77
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

67

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM7360

IRHM7360 数据手册

与IRHM7360相关器件

与IRHM7360相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM7360

IRHM7360 数据手册

与IRHM7360相关器件

与IRHM7360相关文章

您还可以找

您在本页遇到什么问题？