Datasheet > IRHM7450_06

IRHM7450_06

更新时间： 2024-09-23 11:10:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	299K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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IRHM7450_06 数据手册

PD - 90673B

IRHM7450

JANSR2N7270

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

500V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

JANSR2N7270

JANSF2N7270

JANSG2N7270

IRHM7450

IRHM3450

IRHM4450

IRHM8450

100K Rads (Si)

300K Rads (Si)

500K Rads (Si)

1000K Rads (Si)

0.45Ω

11A

JANSH2N7270

TO-254AA

International Rectifier’s RAD-Hard^TMHEXFET^®

technology provides high performance power

MOSFETs for space applications. This technology

has over a decade of proven performance and

reliability in satellite applications. These devices have

been characterized for both Total Dose and Single

Event Effects (SEE). The combination of low Rdson

and low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

7.0

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

05/18/06

12 3 4 5 6 7...12

中文翻译

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与IRHM7450_06相关器件

型号	品牌	获取价格	描述	数据表
IRHM7450D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 11A I(D) \| TO-254VAR
IRHM7450DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRHM7450SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
IRHM7450SED	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Met
IRHM7450SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Met
IRHM7450SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kr
IRHM7450SEU	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Met
IRHM7450U	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 11A I(D) \| TO-254VAR
IRHM7460SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
IRHM7460SED	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met

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