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IRHM7264SE

更新时间： 2024-09-22 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 98K
描述
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)

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中文翻译

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IRHM7264SE 技术参数

是否Rohs认证： 不符合生命周期：End Of Life
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.3其他特性：AVALANCHE RATED; RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：31 A最大漏极电流 (ID)：31 A
最大漏源导通电阻：0.123 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-MSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：250 W最大脉冲漏极电流 (IDM)：124 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

IRHM7264SE 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1393A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7264SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
250 Volt, 0.087Ω, (SEE) RAD HARD HEXFET Product Summary  
Part Number  
IRHM726SE  
BVDSS  
RDS(on)  
ID  
International Rectifier’s (SEE)RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
250V  
0.087Ω  
35A*  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Electrically Isolated  
■ Ceramic Eyelets  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Absolute Maximum Ratings  
Parameter  
IRHM7264SE  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
GS C  
35*  
22.8  
140  
D
I
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
A
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
D
250  
W
W/K ➄  
V
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
AS  
I
35*  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
25  
mJ  
AR  
dv/dt  
4.0  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
STG  
oC  
g
(0.063 in. (1.6mm) from  
case for 10 sec.)  
9.3 (typical)  
300  
Weight  
To Order  
Notes: See Page 4. *I current limited by pin diameter  
D
 
 
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中文翻译

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IRHM7264SE 替代型号

型号 品牌 替代类型 描述 数据表
JANSR2N7434 INFINEON

完全替代

 Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
IRHM7264SEPBF INFINEON

功能相似

 Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me

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IRHM7360D ETC

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IRHM7360SED INFINEON

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