生命周期: | Transferred | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.38 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 21 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/658 |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSR2N7439 | INTERSIL |
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Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSF | |
JANSR2N7440 | INTERSIL |
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Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSF | |
JANSR2N7463T2 | INFINEON |
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Rad hard, 400V, 3A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 kra | |
JANSR2N7464T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSR2N7465U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSR2N7466U3 | INFINEON |
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Power Field-Effect Transistor, 4.5A I(D), 500V, 1.65ohm, 1-Element, N-Channel, Silicon, Me | |
JANSR2N7467U2 | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
JANSR2N7467U2A | INFINEON |
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Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k | |
JANSR2N7467U2S | INFINEON |
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Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) | |
JANSR2N7468U2 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |