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JANSR2N7438 PDF预览

JANSR2N7438

更新时间: 2024-11-05 19:42:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 89K
描述
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

JANSR2N7438 技术参数

生命周期:Transferred零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):7 A
最大漏源导通电阻:0.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):21 A
认证状态:Not Qualified参考标准:MIL-19500/658
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSR2N7438 数据手册

 浏览型号JANSR2N7438的Datasheet PDF文件第2页浏览型号JANSR2N7438的Datasheet PDF文件第3页浏览型号JANSR2N7438的Datasheet PDF文件第4页浏览型号JANSR2N7438的Datasheet PDF文件第5页浏览型号JANSR2N7438的Datasheet PDF文件第6页浏览型号JANSR2N7438的Datasheet PDF文件第7页 
JANSR2N7438  
Data Sheet  
January 1999  
File Number 4638  
Formerly Available As FSL913A0R4,  
Radiation Hardened, SEGR Resistant,  
Features  
Title  
• 7A, -100V, r  
= 0.300Ω  
DS(ON)  
ANS P-Channel Power MOSFETs  
N74  
Total Dose  
The Discrete Products Operation of Intersil has developed a  
series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Enhanced Power MOSFET immunity to Single Event Effects  
(SEE), Single Event Gate Rupture (SEGR) in particular, is  
combined with 100K RADS of total dose hardness to provide  
devices which are ideally suited to harsh space  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
b-  
t
or-  
rly  
ail-  
e
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
DM  
L91  
0R4  
adi-  
on  
rd-  
ed,  
GR  
sis-  
t,  
• Photo Current  
- 1.5nA Per-RAD(Si)/s Typically  
• Neutron  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
- Maintain Pre-RAD Specifications  
2
for 3E13 Neutrons/cm  
2
- Usable to 3E14 Neutrons/cm  
Symbol  
D
Chan-  
G
wer  
OS-  
Ts)  
Also available at other radiation and screening levels. See us  
on the web, Intersil’ home page:  
http://www.semi.intersil.com. Contact your local Intersil Sales  
Office for additional information.  
S
utho  
Packaging  
TO-205AF  
Ordering Information  
ey-  
rds  
ter-  
PART NUMBER  
PACKAGE  
BRAND  
JANSR2N7438  
TO-205AF  
JANSR2N7438  
Die Family TA17796.  
MIL-PRF-19500/658.  
rpo-  
on,  
mi-  
n-  
G
D
S
ctor,  
r-  
rly  
ail-  
©2001 Fairchild Semiconductor Corporation  
JANSR2N7438 Rev. A  

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