5秒后页面跳转
捷配首页

Datasheet > JANSR2N7424
JANSR2N7424 PDF预览

JANSR2N7424

更新时间： 2024-11-06 11:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
22页 232K
描述
Rad hard, -60V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

JANSR2N7424 技术参数

是否Rohs认证：不符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.76Is Samacsys：N
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Qualified
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANSR2N7424 数据手册

 浏览型号JANSR2N7424的Datasheet PDF文件第2页浏览型号JANSR2N7424的Datasheet PDF文件第3页浏览型号JANSR2N7424的Datasheet PDF文件第4页浏览型号JANSR2N7424的Datasheet PDF文件第5页浏览型号JANSR2N7424的Datasheet PDF文件第6页浏览型号JANSR2N7424的Datasheet PDF文件第7页 
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 6 February 2014.  
INCH-POUND  
MIL-PRF-19500/660E  
6 December 2013  
SUPERSEDING  
MIL-PRF-19500/660D  
11 February 2013  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED  
TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426,  
JANTXVR, JANTXVF, JANSR, AND JANSF  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,  
MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type  
as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).  
See 6.5 for JANHC and JANKC die versions.  
1.2 Physical dimensions. See figure 1, TO-254AA.  
1.3 Maximum ratings. Unless otherwise specified, TA = +25oC.  
Type  
PT (1)  
TC =  
+25°C  
PT  
TA =  
+25°C  
VDS  
VDG  
VGS  
ID1 (3) (4) ID2 (3)(4)  
IS  
IDM  
(5)  
TJ  
and  
TSTG  
R θJC  
(2)  
TC =  
TC =+25°C  
+100°C  
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
A dc  
A (pk)  
°C/W  
°C  
2N7424  
2N7425  
2N7426  
250  
250  
250  
3.0  
3.0  
3.0  
-60  
-60  
-35  
-35  
-27  
-30  
-24  
-17  
-35  
-35  
-27  
-140  
-140  
-108  
0.50  
0.50  
0.50  
±20  
±20  
±20  
-55  
to  
+150  
-100  
-200  
-100  
-200  
(1) Derate linearly 2.0 W/°C for TC > +25°C.  
(2) See figure 2, thermal impedance curves.  
(3) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal  
construction.  
-
TJM TC  
( on ) at  
TJM  
=
ID  
(
)
x
(
)
RθJC  
RDS  
(4) See figure 3, maximum drain current graphs.  
(5) IDM = 4 x ID1 as calculated in note 3.  
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.dla.mil.  
AMSC N/A  
FSC 5961  
 
1234567...22

中文翻译

下载PDF

与JANSR2N7424相关器件

型号 品牌 获取价格 描述 数据表
JANSR2N7424D INFINEON

获取价格

 		Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
JANSR2N7424U INFINEON

获取价格

 		Rad hard, -60V, -48A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7425 INFINEON

获取价格

 		Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100
JANSR2N7425U INFINEON

获取价格

 		Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7426 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSR2N7426U INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7430T1 FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
JANSR2N7431 INFINEON

获取价格

 		Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kra
JANSR2N7431D INFINEON

获取价格

 		Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
JANSR2N7431U INFINEON

获取价格

 		Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)

与JANSR2N7424相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证