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JANSR2N7402 PDF预览

JANSR2N7402

更新时间: 2024-11-05 20:28:59
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页数 文件大小 规格书
9页 121K
描述
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

JANSR2N7402 数据手册

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JANSR2N7402  
Formerly FSS430R4  
January 2002  
3A, 500V, 2.70 Ohm, Rad Hard,  
N-Channel Power MOSFET  
Features  
Description  
• 3A, 500V, r  
= 2.70  
The Discrete Products Operation of Fairchild Corporation  
has developed a series of Radiation Hardened MOSFETs  
specifically designed for commercial and military space  
applications. Enhanced Power MOSFET immunity to Single  
Event Effects (SEE), Single Event Gate Rupture (SEGR) in  
particular, is combined with 100K RADS of total dose hard-  
ness to provide devices which are ideally suited to harsh  
space environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
DS(ON)  
• Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Fairchild portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant. The MOSFET is well suited for applications  
exposed to radiation environments such as switching regula-  
tion, switching converters, motor drives, relay drivers and  
drivers for high-power bipolar switching transistors requiring  
high speed and low gate drive power. This type can be  
operated directly from integrated circuits.  
- 8.0nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3E12 Neutrons/cm  
2
2
- Usable to 3E13 Neutrons/cm  
Ordering Information  
Also available at other radiation and screening levels. See us  
PART NUMBER  
PACKAGE  
TO-257AA  
BRAND  
JANSR2N7402  
on  
the  
web,  
Fairchild’s  
home  
page:  
http://www.fairchildsemi.com. Contact your local Fairchild  
Sales Office for additional information.  
JANSR2N7402  
Die Family TA17639.  
MIL-PRF-19500/632.  
Symbol  
Package  
TO-257AA  
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
©2002 Fairchild Semiconductor Corporation  
JANSR2N7402 Rev. B  

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