Datasheet > JANSR2N7402

JANSR2N7402

更新时间： 2024-11-20 20:28:59

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
9页	121K
描述
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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JANSR2N7402 数据手册

JANSR2N7402

Formerly FSS430R4

January 2002

3A, 500V, 2.70 Ohm, Rad Hard,

N-Channel Power MOSFET

Features

Description

• 3A, 500V, r

= 2.70Ω

The Discrete Products Operation of Fairchild Corporation

has developed a series of Radiation Hardened MOSFETs

specifically designed for commercial and military space

applications. Enhanced Power MOSFET immunity to Single

Event Effects (SEE), Single Event Gate Rupture (SEGR) in

particular, is combined with 100K RADS of total dose hard-

ness to provide devices which are ideally suited to harsh

space environments. The dose rate and neutron tolerance

necessary for military applications have not been sacrificed.

DS(ON)

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Fairchild portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

- 8.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

for 3E12 Neutrons/cm

- Usable to 3E13 Neutrons/cm

Ordering Information

Also available at other radiation and screening levels. See us

PART NUMBER

PACKAGE

TO-257AA

BRAND

JANSR2N7402

the

web,

Fairchild’s

home

page:

http://www.fairchildsemi.com. Contact your local Fairchild

Sales Office for additional information.

JANSR2N7402

Die Family TA17639.

MIL-PRF-19500/632.

Symbol

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

JANSR2N7402 Rev. B

12 3 4 5 6 7...9

中文翻译

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与JANSR2N7402相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7403	INTERSIL	获取价格	22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7404	INTERSIL	获取价格	15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7405	INTERSIL	获取价格	25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7406	INTERSIL	获取价格	24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7407	INTERSIL	获取价格	Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET
JANSR2N7408	INTERSIL	获取价格	Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET
JANSR2N7410	INTERSIL	获取价格	3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7411	INTERSIL	获取价格	2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7422	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSR2N7422U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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