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JANSR2N7426 PDF预览

JANSR2N7426

更新时间: 2024-11-04 22:55:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 124K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

JANSR2N7426 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71雪崩能效等级(Eas):500 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):27 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-CSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):108 A认证状态:Qualified
参考标准:MIL-19500/660表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSR2N7426 数据手册

 浏览型号JANSR2N7426的Datasheet PDF文件第2页浏览型号JANSR2N7426的Datasheet PDF文件第3页浏览型号JANSR2N7426的Datasheet PDF文件第4页浏览型号JANSR2N7426的Datasheet PDF文件第5页浏览型号JANSR2N7426的Datasheet PDF文件第6页浏览型号JANSR2N7426的Datasheet PDF文件第7页 
PD - 93858  
IRHM9260  
JANSR2N7426  
200V,P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
Product Summary  
REF: MIL-PRF-19500/660  
RAD-HardHEXFET® TECHNOLOGY  
Part Number Radiation Level  
RDS(on)  
ID QPL Part Number  
IRHM9260  
100K Rads (Si)  
300K Rads (Si)  
0.160-27A JANSR2N7426  
0.160-27A JANSF2N7426  
IRHM93260  
TO-254AA  
International Rectifier’s RAD-HardTM HEXFET®  
MOSFET technology provides high performance  
power MOSFETs for space applications. This tech-  
nology has over a decade of proven performance  
and reliability in satellite applications. These de-  
vices have been characterized for both Total Dose  
and Single Event Effects (SEE). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These de-  
vices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switch-  
ing, ease of paralleling and temperature stability  
of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermatically Sealed  
Electically Isolated  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-27  
D
GS  
C
A
I
D
= -12V, T = 100°C Continuous Drain Current  
-17  
-108  
250  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
2.0  
V
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-27  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
-9.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10s)  
9.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
11/27/00  

JANSR2N7426 替代型号

型号 品牌 替代类型 描述 数据表
IRHM9260 INFINEON

完全替代

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSF2N7426 INFINEON

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Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300

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