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JANSR2N7423 PDF预览

JANSR2N7423

更新时间: 2024-11-04 22:55:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 126K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)

JANSR2N7423 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, S-CSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):500 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):14 A
最大漏源导通电阻:0.33 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:S-CSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):56 A
认证状态:Qualified参考标准:MIL-19500/662
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANSR2N7423 数据手册

 浏览型号JANSR2N7423的Datasheet PDF文件第2页浏览型号JANSR2N7423的Datasheet PDF文件第3页浏览型号JANSR2N7423的Datasheet PDF文件第4页浏览型号JANSR2N7423的Datasheet PDF文件第5页浏览型号JANSR2N7423的Datasheet PDF文件第6页浏览型号JANSR2N7423的Datasheet PDF文件第7页 
PD - 91299D  
IRHM9250  
JANSR2N7423  
200V, P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (T0-254AA)  
REF: MIL-PRF-19500/662  
RAD-HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level  
RDS(on) ID  
0.315-14A  
0.315-14A  
QPL Part Number  
JANSR2N7423  
JANSF2N7423  
IRHM9250  
100K Rads (Si)  
300K Rads (Si)  
IRHM93250  
International Rectifier’s RAD-Hard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rds(on) and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
TO-254AA  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-14  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
-9.0  
-56  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-14  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
-41  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical )  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
2/19/03  

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