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JANSR2N7425

更新时间： 2024-11-06 14:56:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 682K
描述
Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL

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JANSR2N7425 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：FLANGE MOUNT, S-XSFM-P3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.72
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：500 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：35 A
最大漏源导通电阻：0.075 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-XSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：140 A
认证状态：Qualified参考标准：MIL-19500/660
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

JANSR2N7425 数据手册

 浏览型号JANSR2N7425的Datasheet PDF文件第2页浏览型号JANSR2N7425的Datasheet PDF文件第3页浏览型号JANSR2N7425的Datasheet PDF文件第4页浏览型号JANSR2N7425的Datasheet PDF文件第5页浏览型号JANSR2N7425的Datasheet PDF文件第6页浏览型号JANSR2N7425的Datasheet PDF文件第7页 
PD-91415H  
IRHM9160  
JANSR2N7425  
100V, P-CHANNEL  
REF: MIL-PRF-19500/660  
RAD-Hard HEXFET TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
Product Summary  
Part Number  
Radiation Level  
100 kRads(Si)  
300 kRads(Si)  
RDS(on)  
0.073  
0.073  
ID  
QPL Part Number  
IRHM9160  
-35A*  
-35A*  
JANSR2N7425  
JANSF2N7425  
IRHM93160  
Description  
Features  
IRHM9160 is part of the International Rectifier HiRel family  
of products. IR HiRel RAD-Hard HEXFET technology  
provides high performance power MOSFETs for space  
applications. This technology has over a decade of proven  
performance and reliability in satellite applications. These  
devices have been characterized for both Total Dose and  
Single Event Effects (SEE). The combination of low Rdson  
and low gate charge reduces the power losses in switching  
applications such as DC to DC converters and motor  
control. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching, ease of paralleling and temperature stability of  
electrical parameters.  
Single Event Effect (SEE) Hardened  
Identical Pre- and Post-Electrical Test Conditions  
Low RDS(on)  
Repetitive Avalanche Ratings  
Dynamic dv/dt Ratings  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Package  
Light Weight  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
-35*  
ID @ VGS = -12V, TC = 25°C Continuous Drain Current  
ID @ VGS = -12V, TC = 100°C Continuous Drain Current  
-24  
-140  
250  
2.0  
A
IDM  
Pulsed Drain Current  
W
W/°C  
V
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
± 20  
500  
VGS  
EAS  
IAR  
mJ  
A
-35  
25  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
-16  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes refer to the page 2.  
1
2018-03-09  
International Rectifier HiRel Products, Inc.  
12345678

中文翻译

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JANSR2N7425 替代型号

型号 品牌 替代类型 描述 数据表
IRHM9160 INFINEON

完全替代

 TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
JANSF2N7425 INFINEON

功能相似

 Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300

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