Datasheet > JANSR2N7411

JANSR2N7411

更新时间： 2024-09-14 22:55:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	48K
描述
2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET

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JANSR2N7411 数据手册

JANSR2N7411

Formerly FSL9110R4

June 1998

2.5A, -100V, 1.30 Ohm, Rad Hard,

P-Channel Power MOSFET

Features

Description

• 2.5A, -100V, r

= 1.30Ω

The Discrete Products Operation of Intersil Corporationhas

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

DS(ON)

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

- 0.3nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Ordering Information

Also available at other radiation and screening levels. See us

on the web, Intersil’s home page: http://www.intersil.com. Con-

tact your local Intersil Sales Ofﬁce for additional information.

PART NUMBER

PACKAGE

TO-205AF

BRAND

JANSR2N7411

Die Family TA17716.

MIL-PRF-19500/639.

Symbol

Package

TO-205AF

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4493

2-100

12 3 4 5 6 7 8

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与JANSR2N7411相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7422	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSR2N7422U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
JANSR2N7423	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
JANSR2N7423U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSR2N7424	INFINEON	获取价格	Rad hard, -60V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 k
JANSR2N7424D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
JANSR2N7424U	INFINEON	获取价格	Rad hard, -60V, -48A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7425	INFINEON	获取价格	Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100
JANSR2N7425U	INFINEON	获取价格	Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7426	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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