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JANSR2N7406 PDF预览

JANSR2N7406

更新时间： 2024-11-23 22:55:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 48K
描述
24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET

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JANSR2N7406 数据手册

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JANSR2N7406  
Formerly FSF250R4  
June 1998  
24A, 200V, 0.110 Ohm, Rad Hard,  
N-Channel Power MOSFET  
Features  
Description  
• 24A, 200V, r  
= 0.110Ω  
The Discrete Products Operation of Intersil Corporation has  
developed a series of Radiation Hardened MOSFETs specif-  
ically designed for commercial and military space applica-  
tions. Enhanced Power MOSFET immunity to Single Event  
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-  
lar, is combined with 100K RADS of total dose hardness to  
provide devices which are ideally suited to harsh space envi-  
ronments. The dose rate and neutron tolerance necessary  
for military applications have not been sacrificed.  
DS(ON)  
• Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant. The MOSFET is well suited for applications  
exposed to radiation environments such as switching regula-  
tion, switching converters, motor drives, relay drivers and  
drivers for high-power bipolar switching transistors requiring  
high speed and low gate drive power. This type can be  
operated directly from integrated circuits.  
- 12nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Ordering Information  
Also available at other radiation and screening levels. See us  
on the web, Intersil’s home page: http://www.intersil.com.  
Contact your local Intersil Sales Office for additional  
information.  
PART NUMBER  
PACKAGE  
TO-254AA  
BRAND  
JANSR2N7406  
JANSR2N7406  
Die Family TA17657.  
MIL-PRF-19500/634.  
Symbol  
Package  
TO-254AA  
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4376.1  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
2-88  
12345678

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