Datasheet > JANSR2N7408

JANSR2N7408

更新时间： 2024-09-14 22:55:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	59K
描述
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

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JANSR2N7408 数据手册

JANSR2N7408

Data Sheet

December 1998

File Number 4637

Formerly Available As FSF450R4,

Radiation Hardened, SEGR Resistant,

N-Channel Power MOSFETs

Features

• 9A, 500V, r

= 0.600Ω

DS(ON)

• Total Dose

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with V

of 10V Off-Bias

to 80% of Rated Breakdown and V

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

DSS

- Typically Survives 2E12 if Current Limited to I

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Photo Current

- 30nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E12 Neutrons/cm

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

• Usable to 3E13 Neutrons/cm

Symbol

Also available at other radiation and screening levels. See us

on the web, Intersil’ home page:

Packaging

http://www.semi.intersil.com. Contact your local Intersil

Sales Ofﬁce for additional information.

TO-254AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

JANSR2N7408

TO-254AA

JANSR2N7408

Die Family TA17659.

MIL-PRF-19500/634.

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

4-1

12 3 4 5 6 7 8

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与JANSR2N7408相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7410	INTERSIL	获取价格	3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7411	INTERSIL	获取价格	2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7422	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSR2N7422U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
JANSR2N7423	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
JANSR2N7423U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSR2N7424	INFINEON	获取价格	Rad hard, -60V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 k
JANSR2N7424D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Met
JANSR2N7424U	INFINEON	获取价格	Rad hard, -60V, -48A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7425	INFINEON	获取价格	Rad hard, -100V, -35A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100

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