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IXYA8N250CHV

更新时间: 2024-02-23 09:11:29
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压
页数 文件大小 规格书
7页 283K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、低能量损耗和快速切换等特点。 凭借通态电压的正温度系数,这些高压IGBT可用于并联,相比串联低电压器件更加

IXYA8N250CHV 数据手册

 浏览型号IXYA8N250CHV的Datasheet PDF文件第1页浏览型号IXYA8N250CHV的Datasheet PDF文件第3页浏览型号IXYA8N250CHV的Datasheet PDF文件第4页浏览型号IXYA8N250CHV的Datasheet PDF文件第5页浏览型号IXYA8N250CHV的Datasheet PDF文件第6页浏览型号IXYA8N250CHV的Datasheet PDF文件第7页 
IXYA8N250CHV  
IXYH8N250CHV  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263HV Outline  
Min.  
Typ.  
9.0  
11  
Max.  
E
A
L1  
C2  
gfs  
IC = 8A, VCE = 10V, Note 1  
Gate Input Resistance  
5.4  
S
D1  
E1  
D
H
RGi  
3
A1  
1
2
+
L4  
Cies  
Coes  
Cres  
936  
57  
pF  
pF  
pF  
+
L3  
VCE = 25V, VGE = 0V, f = 1MHz  
GAUGE  
PLANE  
C
b2  
b
e1  
e2  
14  
0º - 8º  
Qg(on)  
Qge  
Qgc  
45  
6
nC  
nC  
nC  
PIN: 1 - Gate  
2 - Emitter  
IC = 8A, VGE = 15V, VCE = 0.5 • VCES  
A2  
3 - Collector  
21  
td(on)  
tri  
Eon  
td(off)  
tfi  
11  
5
ns  
ns  
Inductive load, TJ = 25°C  
IC = 8A, VGE = 15V  
2.60  
180  
86  
mJ  
ns  
VCE = 0.5 • VCES, RG = 15  
Note 2  
ns  
Eof  
1.07  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
12  
12  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 8A, VGE = 15V  
3.70  
200  
128  
1.20  
mJ  
ns  
VCE = 0.5 • VCES, RG = 15  
Note 2  
ns  
Eoff  
mJ  
TO-247HV Outline  
RthJC  
RthCS  
0.53 °C/W  
°C/W  
E1  
E
A
R
0P  
0P1  
A2  
TO-247HV  
0.21  
Q
S
D1  
D
4
D2  
E2  
E3  
4X  
1
2
3
L1  
L
A3  
2X  
D3  
Notes:  
A1  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
e
b
b1  
c
e1  
3X  
3X  
PINS:  
1 - Gate 2 - Emitter  
3, 4 - Collector  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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