IXYA8N250CHV
IXYH8N250CHV
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263HV Outline
Min.
Typ.
9.0
11
Max.
E
A
L1
C2
gfs
IC = 8A, VCE = 10V, Note 1
Gate Input Resistance
5.4
S
D1
E1
D
H
RGi
3
A1
1
2
+
L4
Cies
Coes
Cres
936
57
pF
pF
pF
+
L3
VCE = 25V, VGE = 0V, f = 1MHz
GAUGE
PLANE
C
b2
b
e1
e2
14
0º - 8º
Qg(on)
Qge
Qgc
45
6
nC
nC
nC
PIN: 1 - Gate
2 - Emitter
IC = 8A, VGE = 15V, VCE = 0.5 • VCES
A2
3 - Collector
21
td(on)
tri
Eon
td(off)
tfi
11
5
ns
ns
Inductive load, TJ = 25°C
IC = 8A, VGE = 15V
2.60
180
86
mJ
ns
VCE = 0.5 • VCES, RG = 15
Note 2
ns
Eof
1.07
mJ
f
td(on)
tri
Eon
td(off)
tfi
12
12
ns
ns
Inductive load, TJ = 150°C
IC = 8A, VGE = 15V
3.70
200
128
1.20
mJ
ns
VCE = 0.5 • VCES, RG = 15
Note 2
ns
Eoff
mJ
TO-247HV Outline
RthJC
RthCS
0.53 °C/W
°C/W
E1
E
A
R
0P
0P1
A2
TO-247HV
0.21
Q
S
D1
D
4
D2
E2
E3
4X
1
2
3
L1
L
A3
2X
D3
Notes:
A1
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
e
b
b1
c
e1
3X
3X
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537