Datasheet > IXYB82N120C3H1

IXYB82N120C3H1

更新时间： 2024-02-23 09:11:06

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	279K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

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数据手册

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IXYB82N120C3H1 数据手册

1200V XPT^TMIGBT

GenX3^TMw/ Diode

V_CES= 1200V

I_C110= 82A

V_CE(sat) 3.2V

t_fi(typ)= 93ns

IXYB82N120C3H1

High-Speed IGBT

for 20-50 kHz Switching

PLUS264^TM

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1M

Tab

V_GES

V_GEM

Continuous

Transient

±20

±30

G = Gate

Collector

E = Emitter

Tab = Collector

I_C25

T_C= 25°C (Chip Capability)

Lead Current Limit

T_C= 110°C

164

160

I_LRMS

I_C110

I_F110

T_C= 110°C

I_CM

T_C= 25°C, 1ms

320

Features

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2

I_CM= 164

(RBSOA)

Clamped Inductive Load

@V_CE V_CES



Optimized for Low Switching Losses

Square RBSOA

Anti-Parallel Ultra Fast Diode

Positive Thermal Coefficient of

Vce(sat)



P_C

T_C= 25°C

1040

T_J

T_JM

T_stg

-55 ... +150

150

°C



-55 ... +150

High Current Handling Capability

International Standard Package

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Advantages

F_C

Mounting Force

30..120 / 6.7..27

N/lb.

Weight



High Power Density



Low Gate Drive Requirement

Applications



High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



5.0



50 A

100 nA

T_J= 125C

I_GES

V_CE= 0V, V_GE= 20V

V_CE(sat)

I_C= 82A, V_GE= 15V, Note 1

2.75

3.50

3.20

DS100355F(7/18)

12 3 4 5 6 7 8

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