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IXXR100N60B3H1 PDF预览

IXXR100N60B3H1

更新时间: 2024-11-18 20:08:51
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
7页 226K
描述
Insulated Gate Bipolar Transistor, 145A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN

IXXR100N60B3H1 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:ISOPLUS包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.73其他特性:AVALANCHE RATED
外壳连接:ISOLATED最大集电极电流 (IC):145 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):350 ns
标称接通时间 (ton):92 nsBase Number Matches:1

IXXR100N60B3H1 数据手册

 浏览型号IXXR100N60B3H1的Datasheet PDF文件第2页浏览型号IXXR100N60B3H1的Datasheet PDF文件第3页浏览型号IXXR100N60B3H1的Datasheet PDF文件第4页浏览型号IXXR100N60B3H1的Datasheet PDF文件第5页浏览型号IXXR100N60B3H1的Datasheet PDF文件第6页浏览型号IXXR100N60B3H1的Datasheet PDF文件第7页 
XPTTM 600V IGBT  
GenX3TM w/ Diode  
VCES = 600V  
IC110 = 68A  
VCE(sat) 1.80V  
tfi(typ) = 150ns  
IXXR100N60B3H1  
(Electrically Isolated Tab)  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
ISOPLUS247TM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C, RGE = 1MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
Isolated Tab  
E
IC25  
IC110  
IF90  
TC = 25°C(Chip Capability)  
TC = 110°C  
TC = 90°C  
145  
68  
54  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
ICM  
TC = 25°C, 1ms  
440  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
(RBSOA)  
@VCE VCES  
Features  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 10Ω, Non Repetitive  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
Optimized for 10-30kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
PC  
TC = 25°C  
400  
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
z
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
FC  
20..120/4.5..27  
5
N/lb.  
g
Weight  
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
5.5  
z
z
50 μA  
4 mA  
z
TJ = 125°C  
TJ = 150°C  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
Welding Machines  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.50  
1.77  
1.80  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100420B(04/13)  

IXXR100N60B3H1 替代型号

型号 品牌 替代类型 描述 数据表
IXSR40N60BD1 IXYS

功能相似

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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