XPTTM 650V IGBT
GenX4TM
w/Sonic Diode
IXXX140N65B4H1
VCES = 650V
IC110 = 140A
VCE(sat) 1.90V
tfi(typ) = 44ns
Extreme Light Punch Through
IGBT for 10-30kHz Switching
PLUS247
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
TJ = 25°C to 175°C, RGE = 1M
V
G
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C
Tab
E
IC25
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
340
160
140
72
A
A
A
A
ILRMS
IC110
IF110
G = Gate
E
= Emitter
C = Collector
Tab = Collector
TC = 110°C
ICM
TC = 25°C, 1ms
840
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 4.7
Clamped Inductive Load
I
= 240
A
VCCEM VCES
Features
tsc
VGE = 15V, VCE = 400V, TJ = 150°C
10
µs
W
(SCSOA)
RG = 10, Non Repetitive
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
PC
TC = 25°C
1200
TJ
-55 ... +175
175
°C
°C
°C
Anti-Parallel Sonic Diode
High Current Handling Capability
International Standard Package
TJM
Tstg
-55 ... +175
TL
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10s
300
°C
Advantages
FC
Mounting Force
20..120 /4.5..27
6
N/lb
g
High Power Density
Low Gate Drive Requirement
Weight
Applications
Symbol
Test Conditions
Characteristic Values
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
(TJ = 25C, Unless Otherwise Specified)
Min.
650
4.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250µA, VGE = 0V
IC = 250µA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.5
25 µA
5 mA
TJ = 150°C
High Frequency Power Inverters
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 120A, VGE = 15V, Note 1
TJ = 150°C
1.55
1.76
1.90
V
V
© 2021 Littelfuse, Inc.
DS100651C(01/21)