5秒后页面跳转
IXXX200N65B4 PDF预览

IXXX200N65B4

更新时间: 2024-11-06 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管
页数 文件大小 规格书
7页 265K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热阻、低能量损耗、快速切换、低尾电流和高电流密度等特点。 此外,它们在短路条件下表现出绝佳的强度——10μs

IXXX200N65B4 数据手册

 浏览型号IXXX200N65B4的Datasheet PDF文件第2页浏览型号IXXX200N65B4的Datasheet PDF文件第3页浏览型号IXXX200N65B4的Datasheet PDF文件第4页浏览型号IXXX200N65B4的Datasheet PDF文件第5页浏览型号IXXX200N65B4的Datasheet PDF文件第6页浏览型号IXXX200N65B4的Datasheet PDF文件第7页 
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX4TM  
IXXK200N65B4  
IXXX200N65B4  
VCES = 650V  
IC110 = 200A  
VCE(sat)  1.7V  
tfi(typ) = 80ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264 (IXXK)  
G
C
E
Symbol  
Test Conditions  
Maximum Ratings  
Tab  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
PLUS247 (IXXX)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
ILRMS  
IC110  
TC = 25°C (Chip Capability)  
Lead Current Limit  
TC = 110°C  
480  
160  
200  
A
A
A
G
C
Tab  
ICM  
TC = 25°C, 1ms  
1100  
A
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1  
ICM = 400  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
1630  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 10-30kHz Switching  
Square RBSOA  
-55 ... +175  
Short Circuit Capability  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Current Handling Capability  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
25 μA  
mA  
±200 nA  
TJ = 150°C  
2
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 160A, VGE = 15V, Note 1  
TJ = 150°C  
1.4  
1.6  
1.7  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100518C(6/14)  

与IXXX200N65B4相关器件

型号 品牌 获取价格 描述 数据表
IXXX300N60B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXXX300N60C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA12N250CHV LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、
IXYA15N65C3D1 IXYS

获取价格

Preliminary Technical Information
IXYA15N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA20N120C3HV LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA20N120C4HV LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXYA20N65B3 IXYS

获取价格

Advance Technical Information
IXYA20N65B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA20N65C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT