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IXXX160N65C4 PDF预览

IXXX160N65C4

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管
页数 文件大小 规格书
7页 286K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热阻、低能量损耗、快速切换、低尾电流和高电流密度等特点。 此外,它们在短路条件下表现出绝佳的强度——10μs

IXXX160N65C4 数据手册

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Preliminary Technical Information  
XPTTM 650V IGBTs  
GenX4TM  
IXXK160N65C4  
IXXX160N65C4  
VCES = 650V  
IC110 = 160A  
VCE(sat) 2.1V  
tfi(typ) = 30ns  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-264 (IXXK)  
G
C
E
Symbol  
Test Conditions  
Maximum Ratings  
Tab  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1MΩ  
PLUS247 (IXXX)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
ILRMS  
IC110  
TC= 25°C (Chip Capability)  
Leads Current Limit  
TC = 110°C  
290  
160  
160  
A
A
A
G
C
Tab  
ICM  
TC = 25°C, 1ms  
800  
A
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
ICM = 320  
A
G = Gate  
C = Collector  
E
= Emitter  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
Tab = Collector  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
μs  
(SCSOA)  
RG = 10Ω, Non Repetitive  
PC  
TC = 25°C  
940  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
Optimized for 20-60kHz Switching  
Square RBSOA  
Short Circuit Capability  
International Standard Packages  
High Current Handling Capability  
z
z
z
z
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
High Power Density  
Low Gate Drive Requirement  
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
z
6.5  
z
25 μA  
1.5 mA  
z
z
TJ = 150°C  
z
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
z
VCE(sat)  
IC = 160A, VGE = 15V, Note 1  
TJ = 150°C  
1.7  
2.1  
2.1  
V
V
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100516A(02/13)  

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