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IXYA12N250CHV PDF预览

IXYA12N250CHV

更新时间: 2024-11-06 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压
页数 文件大小 规格书
7页 322K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、低能量损耗和快速切换等特点。 凭借通态电压的正温度系数,这些高压IGBT可用于并联,相比串联低电压器件更加

IXYA12N250CHV 数据手册

 浏览型号IXYA12N250CHV的Datasheet PDF文件第2页浏览型号IXYA12N250CHV的Datasheet PDF文件第3页浏览型号IXYA12N250CHV的Datasheet PDF文件第4页浏览型号IXYA12N250CHV的Datasheet PDF文件第5页浏览型号IXYA12N250CHV的Datasheet PDF文件第6页浏览型号IXYA12N250CHV的Datasheet PDF文件第7页 
Advance Technical Information  
High Voltage  
XPTTM IGBT  
VCES = 2500V  
IC110 = 12A  
VCE(sat)  4.50V  
tfi(typ) = 136ns  
IXYA12N250CHV  
IXYH12N250CHV  
TO-263HV (IXYA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
2500  
2500  
V
V
TJ = 25°C to 175°C, RGE = 1M  
TO-247HV (IXYH)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
28  
12  
80  
A
A
A
G
E
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 150°C, RG = 10  
Clamped Inductive Load  
ICM = 48  
1500  
A
V
C (Tab)  
C
PC  
TC = 25°C  
310  
W
G = Gate  
C
= Collector  
E = Emitter  
Tab = Collector  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Voltage Packages  
High Blocking Voltage  
Md  
Mounting Torque (TO-247HV)  
1.13/10  
Nm/lb.in.  
Weight  
TO-263HV  
TO-247HV  
2.5  
6.0  
g
g
High Peak Current Capability  
Low Saturation Voltage  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Low Gate Drive Requirement  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
10 A  
mA  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
TJ = 150C  
3
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 12A, VGE = 15V, Note 1  
TJ = 150C  
3.70  
5.55  
4.50  
V
V
© 2017 IXYS CORPORATION, All Rights Reserved.  
DS100836A(5/17)  

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