5秒后页面跳转
IXYA30N120A4HV PDF预览

IXYA30N120A4HV

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极驱动双极性晶体管
页数 文件大小 规格书
8页 416K
描述
通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达1200V的器件有助于降低栅极驱动要求和传导损耗。 具有低热阻、低损耗、高电流密度和低栅极电荷要求的特点。

IXYA30N120A4HV 数据手册

 浏览型号IXYA30N120A4HV的Datasheet PDF文件第2页浏览型号IXYA30N120A4HV的Datasheet PDF文件第3页浏览型号IXYA30N120A4HV的Datasheet PDF文件第4页浏览型号IXYA30N120A4HV的Datasheet PDF文件第5页浏览型号IXYA30N120A4HV的Datasheet PDF文件第6页浏览型号IXYA30N120A4HV的Datasheet PDF文件第7页 
Advance Technical Information  
1200V XPTTM  
GenX4TM IGBT  
VCES = 1200V  
IC110 = 30A  
VCE(sat)  1.9V  
tfi(typ) = 147ns  
IXYA30N120A4HV  
IXYP30N120A4  
IXYH30N120A4  
Ultra Low-Vsat PT IGBT for  
up to 5kHz Switching  
TO-263HV  
(IXYA..HV)  
G
E
C (Tab)  
TO-220  
Symbol  
Test Conditions  
Maximum Ratings  
(IXYP)  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
C (Tab)  
IC25  
IC110  
TC = 25°C  
TC = 110°C  
106  
30  
A
A
TO-247  
(IXYH)  
ICM  
TC = 25°C, 1ms  
184  
A
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
ICM = 60  
A
(RBSOA)  
Clamped Inductive Load  
VCE 0.8 • VCES  
G
PC  
TC = 25°C  
500  
W
C
C (Tab)  
E
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
-55 ... +175  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Optimized for Low Conduction  
Positive Thermal Coefficient of  
Vce(sat)  
FC  
Md  
Mounting Force (TO-263HV)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Weight  
TO-263HV  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
4.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
10 A  
TJ = 150C  
TJ = 150C  
500 A  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 25A, VGE = 15V, Note 1  
1.6  
1.9  
1.9  
V
V
Inrush Current Protection Circuits  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100928A(8/18)  

与IXYA30N120A4HV相关器件

型号 品牌 获取价格 描述 数据表
IXYA50N65C3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXYA50N65C3-TRL IXYS

获取价格

Insulated Gate Bipolar Transistor,
IXYA8N250CHV LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、
IXYA8N90C3D1 IXYS

获取价格

900V XPTTM IGBT
IXYA8N90C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYB82N120C3H1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN
IXYB82N120C3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYF16N250CV1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、
IXYF30N170CV1 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXYF30N450 IXYS

获取价格

Insulated Gate Bipolar Transistor,