5秒后页面跳转
IXYA20N120C4HV PDF预览

IXYA20N120C4HV

更新时间: 2024-11-06 15:19:31
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管
页数 文件大小 规格书
8页 2335K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热阻、低能量损耗、快速切换、低尾电流和高电流密度等特点。 此外,它们在短路条件下表现出绝佳的强度——10μs

IXYA20N120C4HV 数据手册

 浏览型号IXYA20N120C4HV的Datasheet PDF文件第2页浏览型号IXYA20N120C4HV的Datasheet PDF文件第3页浏览型号IXYA20N120C4HV的Datasheet PDF文件第4页浏览型号IXYA20N120C4HV的Datasheet PDF文件第5页浏览型号IXYA20N120C4HV的Datasheet PDF文件第6页浏览型号IXYA20N120C4HV的Datasheet PDF文件第7页 
1200V XPTTM  
GenX4TM IGBT  
VCES = 1200V  
IC110 = 20A  
VCE(sat)  2.5V  
tfi(typ) = 58ns  
IXYA20N120C4HV  
IXYP20N120C4  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-263HV  
(IXYA..HV)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
TO-220  
(IXYP)  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
68  
20  
120  
A
A
A
C
E
C (Tab)  
G = Gate  
E = Emitter  
D
= Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 10  
Clamped Inductive Load  
ICM = 40  
A
Tab = Collector  
(RBSOA)  
VCE 0.8 • VCES  
PC  
TC = 25°C  
375  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Optimized for 20-50kHz Switching  
Positive Thermal Coefficient of  
Md  
FC  
Mounting Torque (TO-220)  
Mounting Force (TO-263HV)  
1.13/10  
10..65 / 22..14.6  
Nm/lb.in  
N/lb  
Vce(sat)  
International Standard Packages  
Weight  
TO-263HV  
TO-220  
2.5  
3.0  
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
4.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
Battery Chargers  
Welding Machines  
6.5  
25 A  
mA  
100 nA  
TJ = 150C  
TJ = 150C  
5
IGES  
VCE = 0V, VGE = 20V  
Lamp Ballasts  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.1  
2.5  
2.5  
V
V
© 2020IXYS CORPORATION, All Rights Reserved  
DS100927B(2/20)  

与IXYA20N120C4HV相关器件

型号 品牌 获取价格 描述 数据表
IXYA20N65B3 IXYS

获取价格

Advance Technical Information
IXYA20N65B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA20N65C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA20N65C3D1 IXYS

获取价格

XPTTM 650V IGBT
IXYA20N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYA24N100A4HV LITTELFUSE

获取价格

通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达
IXYA24N100C4HV LITTELFUSE

获取价格

通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达
IXYA30N120A4HV LITTELFUSE

获取价格

通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达
IXYA50N65C3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXYA50N65C3-TRL IXYS

获取价格

Insulated Gate Bipolar Transistor,