5秒后页面跳转
IXTY1R6N100D2 PDF预览

IXTY1R6N100D2

更新时间: 2024-11-18 07:02:55
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 178K
描述
Depletion Mode MOSFET

IXTY1R6N100D2 数据手册

 浏览型号IXTY1R6N100D2的Datasheet PDF文件第2页浏览型号IXTY1R6N100D2的Datasheet PDF文件第3页浏览型号IXTY1R6N100D2的Datasheet PDF文件第4页浏览型号IXTY1R6N100D2的Datasheet PDF文件第5页 
Preliminary Technical Information  
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 1.6A  
IXTY1R6N100D2  
IXTA1R6N100D2  
IXTP1R6N100D2  
RDS(on) 10Ω  
N-Channel  
TO-252 (IXTY)  
G
S
D (Tab)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXTA)  
TJ = 25°C to 150°C  
1000  
V
VGSX  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
S
PD  
TC = 25°C  
100  
W
D (Tab)  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TO-220AB (IXTP)  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
G
D
D (Tab)  
= Drain  
S
G = Gate  
D
S = Source  
Tab = Drain  
Features  
• Normally ON Mode  
• International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250μA  
VDS = 25V, ID = 100μA  
VGS = ±20V, VDS = 0V  
VDS = VDSX, VGS= - 5V  
V
V
Advantages  
- 4.5  
• Easy to Mount  
• Space Savings  
• High Power Density  
±100 nA  
μA  
25 μA  
IDSX(off)  
2
TJ = 125°C  
Applications  
RDS(on)  
ID(on)  
VGS = 0V, ID = 0.8A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
10  
Ω
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
Ramp Generators  
• Current Regulators  
• Active Loads  
1.6  
A
DS100185A(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

与IXTY1R6N100D2相关器件

型号 品牌 获取价格 描述 数据表
IXTY1R6N50D2 IXYS

获取价格

Depletion Mode MOSFET
IXTY1R6N50D2 LITTELFUSE

获取价格

不同于增强型MOSFET,这些耗尽型器件在“常开”模式下运行,因此栅极引出线处需要的开启电
IXTY1R6N50P IXYS

获取价格

PolarHV Power MOSFET
IXTY26P10T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱
IXTY2N100P LITTELFUSE

获取价格

Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTY2N100P IXYS

获取价格

Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTY2N100P-TRL LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTY2N60P IXYS

获取价格

PolarHV Power MOSFET
IXTY2N60P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTY2N65X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,