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IXTY1R6N100D2 PDF预览

IXTY1R6N100D2

更新时间: 2024-11-06 07:02:55
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描述
Depletion Mode MOSFET

IXTY1R6N100D2 数据手册

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Preliminary Technical Information  
Depletion Mode  
MOSFET  
VDSX = 1000V  
ID(on) > 1.6A  
IXTY1R6N100D2  
IXTA1R6N100D2  
IXTP1R6N100D2  
RDS(on) 10Ω  
N-Channel  
TO-252 (IXTY)  
G
S
D (Tab)  
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXTA)  
TJ = 25°C to 150°C  
1000  
V
VGSX  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
S
PD  
TC = 25°C  
100  
W
D (Tab)  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TO-220AB (IXTP)  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
G
D
D (Tab)  
= Drain  
S
G = Gate  
D
S = Source  
Tab = Drain  
Features  
• Normally ON Mode  
• International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
- 2.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250μA  
VDS = 25V, ID = 100μA  
VGS = ±20V, VDS = 0V  
VDS = VDSX, VGS= - 5V  
V
V
Advantages  
- 4.5  
• Easy to Mount  
• Space Savings  
• High Power Density  
±100 nA  
μA  
25 μA  
IDSX(off)  
2
TJ = 125°C  
Applications  
RDS(on)  
ID(on)  
VGS = 0V, ID = 0.8A, Note 1  
VGS = 0V, VDS = 50V, Note 1  
10  
Ω
• Audio Amplifiers  
• Start-Up Circuits  
• Protection Circuits  
Ramp Generators  
• Current Regulators  
• Active Loads  
1.6  
A
DS100185A(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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