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IXTY44N10T PDF预览

IXTY44N10T

更新时间: 2024-11-19 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
7页 306K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXTY44N10T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXTY44N10T 数据手册

 浏览型号IXTY44N10T的Datasheet PDF文件第2页浏览型号IXTY44N10T的Datasheet PDF文件第3页浏览型号IXTY44N10T的Datasheet PDF文件第4页浏览型号IXTY44N10T的Datasheet PDF文件第5页浏览型号IXTY44N10T的Datasheet PDF文件第6页浏览型号IXTY44N10T的Datasheet PDF文件第7页 
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 44A  
RDS(on) 30m  
IXTY44N10T  
IXTP44N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252  
(IXTY)  
G
S
D (Tab)  
TO-220  
(IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
ILRMS  
TC = 25C  
Lead Current Limit, (RMS) (TO-252)  
44  
25  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
110  
A
G
S
= Gate  
= Source Tab  
D
=
=
Drain  
Drain  
IA  
TC = 25C  
TC = 25C  
10  
A
EAS  
250  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175C  
TC = 25C  
12  
V/ns  
W
Features  
130  
International Standard Packages  
175°C Operating Temperature  
Avalanche Rated  
Low RDS(on)  
High Current Handling Capability  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Advantages  
Weight  
TO-252  
TO-220  
0.35  
3.00  
g
g
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Automotive  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 25A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.5  
V
V
- Motor Drives  
- 24 / 48V Power Bus  
- ABS Systems  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
High Current Switching Applications  
4.5  
            100 nA  
A  
IDSS  
1
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
200  A  
30 m  
RDS(on)  
DS99646B(11/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低