5秒后页面跳转
IXTY1R6N50D2 PDF预览

IXTY1R6N50D2

更新时间: 2024-11-06 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
7页 368K
描述
不同于增强型MOSFET,这些耗尽型器件在“常开”模式下运行,因此栅极引出线处需要的开启电压为零。 凭借高达1700V的阻断电压和较低的漏极到源极电阻,这些器件在持续“开启”的系统(例如紧急警报或

IXTY1R6N50D2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:NBase Number Matches:1

IXTY1R6N50D2 数据手册

 浏览型号IXTY1R6N50D2的Datasheet PDF文件第2页浏览型号IXTY1R6N50D2的Datasheet PDF文件第3页浏览型号IXTY1R6N50D2的Datasheet PDF文件第4页浏览型号IXTY1R6N50D2的Datasheet PDF文件第5页浏览型号IXTY1R6N50D2的Datasheet PDF文件第6页浏览型号IXTY1R6N50D2的Datasheet PDF文件第7页 
Depletion Mode  
MOSFET  
VDSX = 500V  
ID(on) > 1.6A  
IXTY1R6N50D2  
IXTA1R6N50D2  
IXTP1R6N50D2  
RDS(on) 2.3  
N-Channel  
D
TO-252 (IXTY)  
G
S
G
D (Tab)  
S
TO-263 (IXTA)  
G
S
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
500  
V
D (Tab)  
VGSX  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-220 (IXTP)  
PD  
TC = 25C  
100  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G
D
S
D (Tab)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Features  
• Normally ON Mode  
International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Advantages  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250A  
VDS = 25V, ID = 100A  
VGS = 20V, VDS = 0V  
VDS = VDSX, VGS = - 5V  
500  
V
V
• Easy to Mount  
• Space Savings  
• High Power Density  
- 2.5  
- 4.5  
100 nA  
A  
IDSX(off)  
2
Applications  
TJ = 125C  
25 A  
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
RDS(on)  
ID(on)  
VGS = 0V, ID = 0.8A, Note 1  
VGS = 0V, VDS = 25V, Note 1  
2.3   
1.6  
A
DS100179E(7/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXTY1R6N50D2相关器件

型号 品牌 获取价格 描述 数据表
IXTY1R6N50P IXYS

获取价格

PolarHV Power MOSFET
IXTY26P10T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱
IXTY2N100P LITTELFUSE

获取价格

Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTY2N100P IXYS

获取价格

Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTY2N100P-TRL LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTY2N60P IXYS

获取价格

PolarHV Power MOSFET
IXTY2N60P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTY2N65X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTY2N65X2 IXYS

获取价格

Power Field-Effect Transistor,
IXTY2N80P IXYS

获取价格

Power Field-Effect Transistor, 2A I(D), 800V, 6ohm, 1-Element, N-Channel, Silicon, Metal-o