5秒后页面跳转
IXTY2N65X2 PDF预览

IXTY2N65X2

更新时间: 2024-09-16 21:05:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 214K
描述
Power Field-Effect Transistor,

IXTY2N65X2 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99风险等级:8.51
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IXTY2N65X2 数据手册

 浏览型号IXTY2N65X2的Datasheet PDF文件第2页浏览型号IXTY2N65X2的Datasheet PDF文件第3页浏览型号IXTY2N65X2的Datasheet PDF文件第4页浏览型号IXTY2N65X2的Datasheet PDF文件第5页 
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 650V  
ID25 = 2A  
RDS(on) 2.3  
IXTY2N65X2  
IXTP2N65X2  
N-Channel Enhancement Mode  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-220 (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
2
4
A
A
G
D
S
D (Tab)  
IA  
TC = 25C  
TC = 25C  
1
A
EAS  
100  
mJ  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
55  
V/ns  
W
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-252  
TO-220  
0.35  
3.00  
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
100 nA  
A  
IDSS  
5
TJ = 125C  
100 A  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
2.3  
DS100654B(5/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

与IXTY2N65X2相关器件

型号 品牌 获取价格 描述 数据表
IXTY2N80P IXYS

获取价格

Power Field-Effect Transistor, 2A I(D), 800V, 6ohm, 1-Element, N-Channel, Silicon, Metal-o
IXTY2P50PA LITTELFUSE

获取价格

IXTY2P50PA是一款通过AEC-Q101认证并符合PPAP要求的-500 V、-2
IXTY2R4N50P IXYS

获取价格

Power Field-Effect Transistor, 2.4A I(D), 500V, 3.75ohm, 1-Element, N-Channel, Silicon, Me
IXTY2R4N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTY32P05T IXYS

获取价格

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
IXTY32P05T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱
IXTY3N50P IXYS

获取价格

PolarHV Power MOSFET
IXTY3N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTY3N60P IXYS

获取价格

Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal
IXTY3N60P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡