型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTY90N055T2 | LITTELFUSE |
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这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 | |
IXTZ20N60MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC | |
IXTZ20N60MB | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC | |
IXTZ24N50MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC | |
IXTZ24N50MB | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC | |
IXTZ27N40MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTZ27N40MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTZ35N25MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTZ35N25MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTZ42N20 | IXYS |
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Power Field-Effect Transistor, |