5秒后页面跳转
IXTY8N70X2 PDF预览

IXTY8N70X2

更新时间: 2023-12-06 20:12:18
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管栅极
页数 文件大小 规格书
7页 409K
描述
这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的dv/dt性能。 其雪崩能力也增强了器件的强度。 此外,借助快速软恢复体二极管,超级结MOSFET有助于

IXTY8N70X2 数据手册

 浏览型号IXTY8N70X2的Datasheet PDF文件第2页浏览型号IXTY8N70X2的Datasheet PDF文件第3页浏览型号IXTY8N70X2的Datasheet PDF文件第4页浏览型号IXTY8N70X2的Datasheet PDF文件第5页浏览型号IXTY8N70X2的Datasheet PDF文件第6页浏览型号IXTY8N70X2的Datasheet PDF文件第7页 
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 700V  
ID25 = 8A  
RDS(on) 500m  
IXTU8N70X2  
IXTY8N70X2  
IXTA8N70X2  
IXTP8N70X2  
TO-251 (IXTU)  
N-Channel Enhancement Mode  
G
D
S
D (Tab)  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
700  
700  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-263 (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
8
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
16  
TO-220 (IXTP)  
IA  
TC = 25C  
TC = 25C  
4
A
EAS  
250  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G
D
150  
S
D (Tab)  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
S = Source  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263 & TO-251)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-251  
TO-252  
TO-263  
TO-220  
0.40  
0.35  
2.50  
3.00  
g
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
700  
V
3.0  
5.0  
V
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
10 A  
250 A  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
500 m  
DS100757B(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXTY8N70X2相关器件

型号 品牌 描述 获取价格 数据表
IXTY90N055T2 LITTELFUSE 这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能

获取价格

IXTZ20N60MA ETC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC

获取价格

IXTZ20N60MB ETC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC

获取价格

IXTZ24N50MA ETC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC

获取价格

IXTZ24N50MB ETC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC

获取价格

IXTZ27N40MA IXYS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

获取价格