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IXTY2N60P PDF预览

IXTY2N60P

更新时间: 2024-11-06 03:12:59
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页数 文件大小 规格书
4页 141K
描述
PolarHV Power MOSFET

IXTY2N60P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliant风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:5.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):55 W最大脉冲漏极电流 (IDM):4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTY2N60P 数据手册

 浏览型号IXTY2N60P的Datasheet PDF文件第2页浏览型号IXTY2N60P的Datasheet PDF文件第3页浏览型号IXTY2N60P的Datasheet PDF文件第4页 
PolarHVTM  
Power MOSFET  
IXTP 2N60P  
IXTY 2N60P  
VDSS = 500 V  
ID25 2 A  
RDS(on) 5.1 Ω  
=
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
VDSS  
VDGR  
Test Conditions  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
Maximum Ratings  
TO-220 (IXTP)  
600  
600  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
G
D
S
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
2
4
A
A
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
2
10  
150  
A
mJ  
mJ  
TO-252 AA (IXTY)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 50 Ω  
,
10  
V/ns  
G
S
TC =25° C  
55  
W
(TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
Md  
Mounting torque  
(TO-220)  
1.13/10 Nm/lb.in.  
Weight  
TO-220  
TO-252  
4
0.8  
g
g
Features  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 25 µA  
VDS = VGS, ID = 250 µA  
VGS = 30 V, VDS = 0 V  
600  
V
V
3.0  
5.0  
50  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
50  
µA  
µA  
l
Easy to mount  
Space savings  
High power density  
TJ = 125° C  
l
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
5.1  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99422E(04/06)  
© 2006 IXYS All rights reserved  

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