Datasheet > IXTY1N120P

IXTY1N120P

更新时间： 2024-11-06 01:19:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	315K
描述
N-Channel Enhancement Mode Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTY1N120P 数据手册

Polar^TM

Power MOSFET

IXTY1N120P

IXTA1N120P

IXTP1N120P

V_DSS= 1200V

I_D25= 1A

R_DS(on) 20

N-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXTY)

D (Tab)

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

1200

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

TO-220 (IXTP)

I_D25

I_DM

T_C= 25C

1.0

1.8

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

1.0

E_AS

100

D (Tab)

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

Tab = Drain

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

Low Q_G

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier



F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 50μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

1200



2.5

4.5

DC-DC Converters

Switch-Mode and Resonant-Mode



50 nA

A

Power Supplies

AC and DC Motor Drives



I_DSS





Discharge Circiuts in Lasers, Spark

Igniters, RF Generators

T_J= 125C

200 A





High Voltage Pulse Power

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1& 2

15.5

20.0 

Applications

DS99870D(6/18)

12 3 4 5 6

中文翻译

下载PDF

与IXTY1N120P相关器件

型号	品牌	获取价格	描述	数据表
IXTY1N120P_V01	IXYS	获取价格	N-Channel Enhancement Mode Power MOSFET
IXTY1N80	IXYS	获取价格	High Voltage MOSFET
IXTY1N80P	IXYS	获取价格	Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-
IXTY1N80P	LITTELFUSE	获取价格	Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-
IXTY1R4N100P	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTY1R4N120P	IXYS	获取价格	N-Channel Enhancement Mode Power MOSFET
IXTY1R4N120P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTY1R4N120PHV	IXYS	获取价格	N-Channel Enhancement Mode Power MOSFET
IXTY1R4N120PHV	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡