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IXTY1N80P PDF预览

IXTY1N80P

更新时间: 2024-11-05 13:08:55
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 62K
描述
Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

IXTY1N80P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-252
包装说明:PLASTIC PACKAGE-3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72其他特性:AVALANCHE RATED
雪崩能效等级(Eas):75 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:14 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):42 W
最大脉冲漏极电流 (IDM):2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Pure Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTY1N80P 数据手册

 浏览型号IXTY1N80P的Datasheet PDF文件第2页 
IXTA 1N80  
IXTP 1N80  
IXTY1N80  
VDSS  
ID25  
RDS(on) = 11  
= 800  
= 750 mA  
V
High Voltage MOSFET  
N-ChannelEnhancementMode  
AvalancheEnergyRated  
Preliminary Data  
Symbol  
TestConditions  
Maximum Ratings  
TO-220AB(IXTP)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
AB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
VGSM  
ID25  
IDM  
TC = 25°C  
750  
3
mA  
A
TO-263AA(IXTA)  
TC = 25°C, pulse width limited by TJM  
IAR  
1.0  
A
G
S
EAR  
EAS  
TC = 25°C  
TC = 25°C  
5
mJ  
mJ  
D (TAB)  
100  
TO-252 AA (IXTY)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 47 Ω  
,
3
V/ns  
PD  
TC = 25°C  
40  
W
G
S
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
D (TAB)  
TJM  
Tstg  
-55 ... +150  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
TO-220  
TO-252  
TO-263  
4
0.8  
3
g
g
g
Features  
!International standard packages  
!High voltage, Low RDS (on) HDMOSTM  
process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
!Rugged polysilicon gate cell structure  
!Fast switching times  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 25 µA  
800  
2.5  
V
V
! Switch-mode and resonant-mode  
power supplies  
VGS(th)  
4.5  
! Flyback inverters  
! DC choppers  
! High frequency matching  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
500 µA  
Advantages  
RDS(on)  
VGS = 10 V, ID = 500 mA  
9.5  
11  
Pulse test, t 300 µs, duty cycle d 2 %  
! Space savings  
! High power density  
DS98822C(11/03)  
© 2003 IXYS All rights reserved  

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