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IXTQ26P20P PDF预览

IXTQ26P20P

更新时间: 2024-11-18 12:02:55
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 190K
描述
P-Channel Enhancement Mode Avalanche Rated

IXTQ26P20P 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-3P包装说明:PLASTIC, TO-3P, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:8.51
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):26 A
最大漏极电流 (ID):26 A最大漏源导通电阻:0.17 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):70 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTQ26P20P 数据手册

 浏览型号IXTQ26P20P的Datasheet PDF文件第2页浏览型号IXTQ26P20P的Datasheet PDF文件第3页浏览型号IXTQ26P20P的Datasheet PDF文件第4页浏览型号IXTQ26P20P的Datasheet PDF文件第5页浏览型号IXTQ26P20P的Datasheet PDF文件第6页 
Preliminary Technical Information  
PolarPTM  
Power MOSFET  
P-Channel Enhancement Mode  
Avalanche Rated  
IXTA26P20P  
IXTH26P20P  
IXTP26P20P  
IXTQ26P20P  
TO-247 (IXTH)  
VDSS = - 200V  
ID25 = - 26A  
RDS(on)  
170mΩ  
TO-220 (IXTP)  
TO-263 (IXTA)  
G
S
G
D(TAB)  
D(TAB)  
G
D
S
D(TAB)  
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-3P (IXTQ)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D(TAB)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 26  
- 70  
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
IAR  
TC = 25°C  
- 26  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 175°C  
TC = 25°C  
10  
V/ns  
W
Features:  
300  
z International standard packages  
z Fast intrinsic diode  
z Dynamic dV/dt Rated  
z Avalanche Rated  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z Rugged PolarPTM process  
z Low QG and Rds(on) characterization  
z Low Drain-to-Tab capacitance  
z Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque  
(TO-3P,TO-220,TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-3P  
TO-220  
TO-263  
6.0  
5.5  
3.0  
2.5  
g
g
g
g
Applications:  
z
Hight side switching  
Push-pull amplifiers  
DC Choppers  
Current regulators  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, unless otherwise specified)  
z
Automatic test equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = -250 μA  
VDS = VGS, ID = -250μA  
VGS = ±20V, VDS = 0V  
- 200  
- 2.5  
V
Advantages:  
- 4.5  
V
±100 nA  
z
Low gate charge results in simple  
drive requirement  
Improved Gate, Avalanche and  
dynamic dV/dt ruggedness  
High power density  
IDSS  
VDS = VDSS  
VGS = 0V  
- 10 μA  
- 250 μA  
z
TJ = 150°C  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
170 mΩ  
z
Fast switching  
DS99913(10/07)  
© 2007 IXYS CORPORATION, All rights reserved  

IXTQ26P20P 替代型号

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