Datasheet > IXTQ32P20T

IXTQ32P20T

更新时间： 2024-11-05 19:47:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
8页	239K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTQ32P20T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.39
Base Number Matches：	1

IXTQ32P20T 数据手册

TrenchP^TM

Power MOSFETs

V_DSS= - 200V

I_D25= - 32A

IXTA32P20T

IXTP32P20T

IXTQ32P20T

IXTH32P20T

R_DS(on)

≤

130mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

TO-220AB (IXTP)

TO-3P (IXTQ)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247 (IXTH)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 200

V_DGR

V_GSS

V_GSM

Continuous

Transient

+ 15

+ 25

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 32

- 96

D (Tab)

G = Gate

= Drain

Tab = Drain

I_A

E_AS

T_C= 25°C

- 32

S = Source

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

^zInternational Standard Packages

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic body for 10s

300

260

°C

^zExtended FBSOA

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220, TO-247 & TO-3P)

10..65 / 2.2..14.6

N/lb.

Nm/lb.in.

^zFast Intrinsic Diode

1.13 / 10

Low R_DS(ON)and Q_G

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

6.0

Advantages

TO-247

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, Unless Otherwise Specified)

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 200

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

- 2.0

- 4.0

±100 nA

I_DSS

- 25 μA

-1.25 mA

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

130 mΩ

DS100288B(01/13)

12 3 4 5 6 7 8

中文翻译

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