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IXTQ40N50L2 PDF预览

IXTQ40N50L2

更新时间: 2024-11-05 19:48:23
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 198K
描述
Power Field-Effect Transistor,

IXTQ40N50L2 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.67
其他特性:AVALANCE RATED雪崩能效等级(Eas):2000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):40 A最大漏源导通电阻:0.17 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):540 W
最大脉冲漏极电流 (IDM):80 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

IXTQ40N50L2 数据手册

 浏览型号IXTQ40N50L2的Datasheet PDF文件第2页浏览型号IXTQ40N50L2的Datasheet PDF文件第3页浏览型号IXTQ40N50L2的Datasheet PDF文件第4页浏览型号IXTQ40N50L2的Datasheet PDF文件第5页浏览型号IXTQ40N50L2的Datasheet PDF文件第6页 
LinearL2TM  
Power MOSFET  
w/Extended FBSOA  
VDSS = 500V  
ID25 = 40A  
RDS(on) 170m  
IXTT40N50L2  
IXTQ40N50L2  
IXTH40N50L2  
N-Channel Enhancement Mode  
Avalanche rated  
TO-268 (IXTT)  
G
S
D (Tab)  
TO-3P (IXTQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
G
D
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-247 (IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
40  
80  
A
A
IA  
TC = 25C  
TC = 25C  
40  
2
A
J
EAS  
G
D
PD  
TC = 25C  
540  
W
S
D (Tab)  
D = Drain  
TJ  
-55 to +150  
+150  
C  
C  
C  
TJM  
Tstg  
G = Gate  
S = Source  
-55 to +150  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247&TO-3P)  
1.13/10  
Nm/lb.in  
Weight  
TO-268  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
Features  
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
Guaranteed FBSOA at 75C  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
500  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
4.5  
Solid State Circuit Breakers  
Soft Start Controls  
100 nA  
IDSS  
50 A  
300 A  
Linear Amplifiers  
TJ = 125C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
Programmable Loads  
Current Regulators  
RDS(on)  
170 m  
© 2017 IXYS CORPORATION, All rights reserved  
DS100100B(6/17)  

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