IXTA26P20P

更新时间： 2024-02-25 18:13:00

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	190K
描述
P-Channel Enhancement Mode Avalanche Rated

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中文翻译

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数据手册
替代型号

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IXTA26P20P 数据手册

Preliminary Technical Information

PolarP^TM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTA26P20P

IXTH26P20P

IXTP26P20P

IXTQ26P20P

TO-247 (IXTH)

V_DSS= - 200V

I_D25= - 26A

R_DS(on)

≤

170mΩ

TO-220 (IXTP)

TO-263 (IXTA)

D(TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-3P (IXTQ)

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

- 200

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

D(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

- 26

- 70

G = Gate

S = Source

D = Drain

TAB = Drain

I_AR

T_C= 25°C

- 26

E_AR

E_AS

T_C= 25°C

1.5

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

Features:

300

^zInternational standard packages

^zFast intrinsic diode

^zDynamic dV/dt Rated

^zAvalanche Rated

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

^zRugged PolarP^TMprocess

^zLow Q_Gand R_ds(on)characterization

^zLow Drain-to-Tab capacitance

^zLow package inductance

- easy to drive and to protect

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

M_d

Mounting torque

(TO-3P,TO-220,TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

TO-3P

TO-220

TO-263

6.0

5.5

3.0

2.5

Applications:

Hight side switching

Push-pull amplifiers

DC Choppers

Current regulators

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

Automatic test equipment

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= -250 μA

V_DS= V_GS, I_D= -250μA

V_GS= ±20V, V_DS= 0V

- 200

- 2.5

Advantages:

- 4.5

±100 nA

Low gate charge results in simple

drive requirement

Improved Gate, Avalanche and

dynamic dV/dt ruggedness

High power density

I_DSS

V_DS= V_DSS

V_GS= 0V

- 10 μA

- 250 μA

T_J= 150°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

170 mΩ

Fast switching

DS99913(10/07)

12 3 4 5 6

中文翻译

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IXTA26P20P 替代型号

型号	品牌	替代类型	描述	数据表
IXTQ26P20P	IXYS	功能相似	P-Channel Enhancement Mode Avalanche Rated
IXTP26P20P	IXYS	完全替代	P-Channel Enhancement Mode Avalanche Rated
IXTH26P20P	IXYS	类似代替	P-Channel Enhancement Mode Avalanche Rated

与IXTA26P20P相关器件

型号	品牌	获取价格	描述	数据表
IXTA26P20PTR	IXYS	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Met
IXTA270N04T4	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA270N04T4-7	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA28P065T	IXYS	获取价格	Power Field-Effect Transistor, 28A I(D), 65V, 0.045ohm, 1-Element, P-Channel, Silicon, Met
IXTA28P065T	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA2N100	IXYS	获取价格	Power Field-Effect Transistor, 2A I(D), 1000V, 7ohm, 1-Element, N-Channel, Silicon, Metal-
IXTA2N100	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA2N100A	IXYS	获取价格	Power Field-Effect Transistor, 2A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-
IXTA2N100P	LITTELFUSE	获取价格	Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTA2N100P	IXYS	获取价格	Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta

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