Datasheet > IXTA2N100

IXTA2N100

更新时间： 2024-02-02 15:27:45

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	146K
描述
Power Field-Effect Transistor, 2A I(D), 1000V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

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技术参数
数据手册

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IXTA2N100 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IXTA2N100 数据手册

High Voltage

MOSFET

V_DSS= 1000V

I_D25= 2A

R_DS(on)≤ 7Ω

IXTA2N100

IXTP2N100

N-Channel Enhancement Mode

Avalanche Rated

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

(TAB)

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

TO-220 (IXTP)

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

(TAB)

T_C= 25°C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25°C

150

G = Gate

= Drain

S = Source

TAB = Drain

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

100

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

^zInternational Standard Packages

^zAvalanche Rated

^zLow Package Inductance (< 5nH)

^zFast Switching Times

T_L

1.6mm (0.062) from Case for 10s

Plastic Body for 10s

300

260

°C

T_SOLD

M_d

Mounting Torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

TO-220

2.5

3.0

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

2.0

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.5

^zSwitched-Mode and Resonant-Mode

Power Supplies

^zFlyBack Inverters

±100 nA

^zDC Choppers

I_DSS

25 μA

T_J= 125°C

100 μΑ

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

DS97540B(04/09)

12 3 4

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