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IXTA2N100 PDF预览

IXTA2N100

更新时间: 2024-10-28 19:57:27
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 146K
描述
Power Field-Effect Transistor, 2A I(D), 1000V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

IXTA2N100 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, TO-263, 3 PIN
针数:4Reach Compliance Code:unknown
风险等级:5.67其他特性:AVALANCHE RATED
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (ID):2 A最大漏源导通电阻:7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA2N100 数据手册

 浏览型号IXTA2N100的Datasheet PDF文件第2页浏览型号IXTA2N100的Datasheet PDF文件第3页浏览型号IXTA2N100的Datasheet PDF文件第4页 
High Voltage  
MOSFET  
VDSS = 1000V  
ID25 = 2A  
RDS(on) 7Ω  
IXTA2N100  
IXTP2N100  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
(TAB)  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TO-220 (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
2
8
A
A
(TAB)  
G
TC = 25°C, Pulse Width Limited by TJM  
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
2
150  
A
mJ  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
5
V/ns  
W
100  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Packages  
z Avalanche Rated  
z Low Package Inductance (< 5nH)  
z Fast Switching Times  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting Torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.5  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z FlyBack Inverters  
±100 nA  
z DC Choppers  
IDSS  
25 μA  
TJ = 125°C  
100 μΑ  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
7
Ω
DS97540B(04/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

IXTA2N100 替代型号

型号 品牌 替代类型 描述 数据表
IXTA2N100P IXYS

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Power Field-Effect Transistor, 2A I(D), 1000V, 7.5ohm, 1-Element, N-Channel, Silicon, Meta

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